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August 2006
FDD6637
35V P-Channel PowerTrench ? MOSFET
General Description
Features
This P-Channel MOSFET has been produced using
? –55 A, –35 V
R DS(ON) = 11.6 m ? @ V GS = –10 V
Fairchild Semiconductor’s proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
Applications
R DS(ON) = 18 m ? @ V GS = –4.5 V
? High performance trench technology for extremely
low R DS(ON)
? RoHS Compliant
?
?
Inverter
Power Supplies
D
D
G
G
D-PAK
S
TO-252
(TO-252)
S
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
Parameter
Drain-Source Voltage
Ratings
–35
Units
V
V DS(Avalanche)
V GSS
Drain-Source Avalanche Voltage (maximum)
Gate-Source Voltage
(Note 4)
–40
± 25
V
V
I D
Continuous Drain Current
@T C =25°C
(Note 3)
–55
A
@T A =25°C
Pulsed
(Note 1a)
(Note 1a)
–13
–100
P D
Power Dissipation
@T C =25°C
(Note 3)
57
W
@T A =25°C
@T A =25°C
(Note 1a)
(Note 1b)
3.1
1.3
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JC
R θ JA
R θ JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.2
40
96
° C/W
Package Marking and Ordering Information
Device Marking
FDD6637
Device
FDD6637
Package
D-PAK (TO-252)
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
? 2006 Fairchild Semiconductor Corporation
FDD6637 Rev C2(W)
www.fairchildsemi.com
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相关代理商/技术参数
FDD6637 制造商:Fairchild Semiconductor Corporation 功能描述:P-CHANNEL POWERTRENCH MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET, -35V, 13A, TO-252
FDD6637_06 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:35V P-Channel PowerTrench MOSFET
FDD6637_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel PowerTrench?? MOSFET -35V, -21A, 18m??
FDD6637_F085 功能描述:MOSFET Trans MOS P-Ch 35V 13A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6644 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6644S 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6670 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrench MOSFET
FDD6670A 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube